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STMicroelectronics · Discrete semiconductors

STWA20N95DK5

MOSFET N-CH 950V 18A TO247

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STWA20N95DK5 component illustration
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STWA20N95DK5 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTWA20N95DK5
FamilyDiscrete semiconductors
PackageTO-247-3
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)950 V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs330mOhm @ 9A, 10V
Vgs(th) (Max) @ Id5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs50.7 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1600 pF @ 100 V
FET FeatureNot provided in source
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 Long Leads
Package / CaseTO-247-3

Documents and evidence

STWA20N95DK5 ↗

Catalog sources

www.ic-components.com · STWA20N95DK5 ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STWA20N95DK5

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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