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STMicroelectronics · Discrete semiconductors

STWA75N65DM6

N-CHANNEL 650 V, 33 MOHM TYP., 7

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STWA75N65DM6 component illustration
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STWA75N65DM6 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTWA75N65DM6
FamilyDiscrete semiconductors
PackageTO-247-3
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs36mOhm @ 37.5A, 10V
Vgs(th) (Max) @ Id4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs118 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds5700 pF @ 100 V
FET FeatureNot provided in source
Power Dissipation (Max)480W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 Long Leads
Package / CaseTO-247-3

Documents and evidence

STWA75N65DM6 ↗

Before sourcing STWA75N65DM6

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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