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STMicroelectronics · Discrete semiconductors

STX112-AP

TRANS NPN DARL 100V 2A TO92AP

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STX112-AP component illustration
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STX112-AP specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTX112-AP
FamilyDiscrete semiconductors
PackageTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Product StatusObsolete
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)100 V
Vce Saturation (Max) @ Ib, Ic2.5V @ 8mA, 2A
Current - Collector Cutoff (Max)2mA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 1A, 4V
Power - Max1.2 W
Frequency - TransitionNot provided in source
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device PackageTO-92AP

Documents and evidence

STX112-AP ↗

Catalog sources

www.ic-components.com · STX112-AP ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STX112-AP

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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Questions about STX112-AP

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