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STMicroelectronics · Discrete semiconductors

STY140NS10

MOSFET N-CH 100V 140A MAX247

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STY140NS10 component illustration
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STY140NS10 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTY140NS10
FamilyDiscrete semiconductors
PackageTO-247-3
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C140A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs11mOhm @ 70A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs600 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds12600 pF @ 25 V
FET FeatureNot provided in source
Power Dissipation (Max)450W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageMAX247™
Package / CaseTO-247-3

Documents and evidence

STY140NS10 ↗

Catalog sources

www.ic-components.com · STY140NS10 ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STY140NS10

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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