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STMicroelectronics · Discrete semiconductors

STY60NM60

MOSFET N-CH 600V 60A MAX247

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STY60NM60 component illustration
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STY60NM60 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTY60NM60
FamilyDiscrete semiconductors
PackageTO-247-3
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs55mOhm @ 30A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs266 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds7300 pF @ 25 V
FET FeatureNot provided in source
Power Dissipation (Max)560W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageMAX247™
Package / CaseTO-247-3

Documents and evidence

STY60NM60 ↗

Catalog sources

www.ic-components.com · STY60NM60 ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STY60NM60

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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